NIKON NSR G8A步进式光刻机用于半导体功率器件制造工艺中的光刻工序,即将图形投影到涂有光刻胶的硅片上的装置,由此使得所需图形区域的光刻胶曝光。
设备清单
ITEMS |
Request & SPEC |
Wafer size |
200mm(8 Inch), |
Wafer Loader Type |
Type 1 & Type 2 |
Wafer |
200mm (8 Inch) |
Projection ratio |
5 : 1 |
NA Variable System Exposure Field |
Installed , 0.50 22.0mm X 22.0mm |
Reticle Size |
6 Inch |
Reticle Library |
9 Holds |
Wafer Carrier Table |
2 Carrier |
Illumination Optical System |
Yes |
Field Image Alignment system |
Yes |
Laser Step Alignment system |
Yes |
Chip Leveling |
Yes |
Pre Alignment2 |
Wafer Alignment |
Wafer Chuck |
8-8 R-Type |
Data Back up |
Tape Driver |
设备参数
No.
|
Item |
Specification |
Results |
1 |
Resolution |
0.55µm L & S |
|
2 |
Long Term Focus Stability |
Within ±0.30um |
|
3 |
Auto focus repeatability |
±0.15um(25 points measurement using WAFLAT) |
|
4 |
Focuscalibration repeatability
|
3s ≤0.15um(10 times measurement) |
|
5 |
Lens Stability |
Within 0.05um(3 days measurement) |
|
6 |
Focus Calibration Repeatability |
3s £ 100 nm |
nm |
7 |
Lens Distortion
|
within≤ ±0.07um |
min max X: ~ ㎛ Y: ~ ㎛ |
8 |
Magnification Control Accuracy |
within ±15 nm |
H - I: nm
C - I: nm |
9 |
Maximum Exposure Area |
22.0mm(hor.) x 22.mm |
|
10 |
Reticle Blind Setting Accuracy |
+0.4 mm to +0.8 mm |
Xp: mm ; Xm mm Yp: mm ; Ym mm |
11 |
Exposure Power |
³ 550 mW/cm² |
mW/cm² |
12 |
Illumination Uniformity |
Within ± 1.5% |
|
13 |
FIA Telecem |
±3 mrad |
X: mrad Y: mrad |
14 |
FIA Focus |
±2 ㎛ |
X: ㎛ Y: ㎛ |
15 |
LSA Telecem |
±3 mrad |
X: mrad Y: mrad |
16 |
LSA Focus |
±2 ㎛ |
X: ㎛ Y: ㎛ |
17 |
Intergrated Exposure Stability |
(1) within ±1.2% (2) within ±0.5% |
100: mJ/cm² 200: mJ/cm² 400: mJ/cm² 800: mJ/cm² |
18 |
Wafer Holder Flatness |
Within 1.5μm / 200mm Max≤0.8um |
Max – Min:1.5UM Max :0.8UM |
19 |
Chip Leveling |
Within ±5 μrad |
X : Y: R: P: |
20 |
Auto Focus Stability |
Within 0.4 ㎛ (range) |
|
21 |
Reticle Rotation |
Absolute value Within ±0.02㎛ OF target value Repeatability Within 0.02㎛ |
Absolute value:
Repeatability: |
22 |
Array Orthogonality |
Within ±0.1 sec (ortmortm90)/2≤ ±0.3 urad |
sec ORTM: μrad ORTM90: μrad |
23 |
Stepping Precision |
Within ±0.075㎛ (3σ) |
3 Sigma X: 3 Sigma Y: |
24 |
Overlay-LSA |
lXl+3σ<0.12㎛ |
X: Y: |
25 |
Overlay-FIA |
lXl+3σ<0.12㎛ |
X: Y: |
26 |
WL Repeatability |
Within 15㎛ (3σ) |
3 Sigma X: 3 Sigma Y: 3 Sigma T: |
27 |
Lens Matching |
|mean|+3s < 0.17um |
|
28 |
Operational Test (1) Wafer System (2) Reticle System |
(1) Success rate: ³ 99 % (2) Success rate: 100 % |
% % |
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